logical fab 改DRAM fab 变化(equipment, design and process)不少
Capacitor formation tools (biggest gap)
Logic fabs do not have:
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High-aspect-ratio deep trench etch (or stack capacitor etch)
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ALD high-k dielectric (ZrO? / HfO? / Al?O? stacks)
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Metal fill for capacitors (TiN / Ru)
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Precise dielectric thickness control at scale
| Item | Estimate |
|---|---|
| Tool replacement/addition | $3–7B |
| Process development | 3–5 years |
| Yield ramp | 1–2 years |
| Total time | ~5–7 years |
| Risk | Extremely high |
ChatGPT estimate
